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J-GLOBAL ID:201502245977011975   Reference number:15A0744458

Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors

グラフェン,シリセン及びゲルマネンナノリボン電界効果トランジスタの非平衡Green関数によるシミュレーション
Author (5):
Material:
Volume:Issue:Page: 171-177 (J-STAGE)  Publication year: 2015 
JST Material Number: U0612A  ISSN: 2188-5303  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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All keywords is available on JDreamIII(charged).
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JST classification (2):
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Category name(code) classified by JST.
Electric conduction in semiconductors and insulators in general  ,  Materials of solid-state devices 
Reference (14):
  • [1] K. S. Novoselov et al.: Electric field effect in atomically thin carbon films, Science, 306:5696 (2004), 666–669.
  • [2] S. Cahangirov, M. Topsakal, E. Aktürk, H. Şahin, S. Ciraci: Two- and one-dimensional honeycomb structures of silicon and germanium, Phys. Rev. Lett., 102 (2009) 236804-1–236804-14.
  • [3] H. Sahaf et al.: Formation of a one-dimensional grating at the molecular scale by self-assembly of straight silicon nanowires, Appl. Phys. Lett., 90 (2007) 263110-1–263110-3.
  • [4] N. Zeyuan et al.: Tunable bandgap in silicene and germanene, Nano Lett., 12:1 (2012) 113–118.
  • [5] M. Fujita, K. Wakabayashi, K. Nakada, K. Kusakabe: Peculiar localized state at zigzag graphite edge, J. Phys. Soc. Jpn., 65:7 (1996) 1920–1923.
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