Effect of thermal annealing in a-In<sub>x</sub>Ga<sub>1-x</sub>N films prepared by reactive RF-sputtering

SUZUKI Toshimasa; KATAYAMA Ruichi; HIBINO Shun; KATO Yoshinori; OHASHI Fumitaka; ITOH Takashi; NONOMURA Shuichi

Art

J-GLOBAL ID：201502251218784781 Reference number：15A0213202

Effect of thermal annealing in a-In_xGa_1-xN films prepared by reactive RF-sputtering

反応性RFスパッタリングにより調製されたa-In_xGa_1-xN膜における熱アニーリングの影響

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=15A0213202&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=15A0213202&from=J-GLOBAL&jstjournalNo=B0229A") }}

Author (7)： , , , , , ,
Material：
Volume： 92 Issue： 7/8 Page： 943-946 Publication year： Jul. 2014
JST Material Number： B0229A ISSN： 0008-4204 CODEN： CJPHAD Document type： Article
Country of issue： Canada (CAN) Language： ENGLISH (EN)

, , ,

Return to Previous Page

Effect of thermal annealing in a-InxGa1-xN films prepared by reactive RF-sputtering

Effect of thermal annealing in a-In_xGa_1-xN films prepared by reactive RF-sputtering