Art

J-GLOBAL ID：201502283858346240   Reference number：15A0473104

600V JEDEC-Qualified Highly Reliable GaN HEMTs on Si Substrates

600V JEDEC合格高信頼性GaN HEMTオンSi基板

Author (34)： KIKKAWA Toshihide (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  HOSODA Tsutomu (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  IMANISHI Kenji (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  SHONO Ken (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  ITABASHI Kazuo (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  OGINO Tsutomu (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  MIYAZAKI Yasumori (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  MOCHIZUKI Akitoshi (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  KIUCHI Kenji (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  KANAMURA Masahito (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  KAMIYAMA Masamichi (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  AKIYAMA Shiniichi (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  KAWASAKI Susumu (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  MAEDA Takeshi (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  ASAI Yoshimori (Transphorm Japan Inc., Aizu-Wakamatsu, JPN) ,  WU YiFeng (Transphorm Inc., CA, USA) ,  SMITH Kurt (Transphorm Inc., CA, USA) ,  GRITTERS John (Transphorm Inc., CA, USA) ,  SMITH Peter (Transphorm Inc., CA, USA) ,  CHOWDHURY Saurabh (Transphorm Inc., CA, USA) ,  DUNN Dixie (Transphorm Inc., CA, USA) ,  AGUILERA Martin (Transphorm Inc., CA, USA) ,  SWENSON Brian (Transphorm Inc., CA, USA) ,  BIRKHAHN Ron (Transphorm Inc., CA, USA) ,  MCCARTHY Lee (Transphorm Inc., CA, USA) ,  SHEN Likun (Transphorm Inc., CA, USA) ,  MCKAY Jim (Transphorm Inc., CA, USA) ,  CLEMENT Heber (Transphorm Inc., CA, USA) ,  HONEA Jim (Transphorm Inc., CA, USA) ,  YEA Sung (Transphorm Inc., CA, USA) ,  THOR Douglas (Transphorm Inc., CA, USA) ,  LAL Rakesh (Transphorm Inc., CA, USA) ,  MISHRA Umesh (Transphorm Inc., CA, USA) ,  PARIKH Primit (Transphorm Inc., CA, USA)
Material： Technical Digest. International Electron Devices Meeting  (IEEE International Electron Devices Meeting)
Volume： 2014  Page： 40-43  Publication year： 2014 
JST Material Number： C0829B  ISSN： 0163-1918  Document type： Proceedings
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *HEMT ,  wafer ,  voltage ,  cascade connection ,  acceleration test ,  life test ,  time ,  on resistance
Semi thesaurus term： *GaN HEMT ,  mean time to failure ,  *silicon substrate ,  cascode ,  breakdown voltage ,  accelerated life test

JST classification (1)： Transistors  (NC03070N)

Terms in the title (5)： 合格 ,  高信頼性 ,  GaN ,  HEMT ,  Si基板