Art

J-GLOBAL ID：201602200345768870   Reference number：16A0387888

2D-2D tunneling field-effect transistors using WSe₂/SnSe₂ heterostructures

WSe₂/SnSe₂ヘテロ構造を用いた2D-2Dトンネル電界効果トランジスタ

Author (6)： ROY Tania (Electrical Engineering and Computer Sciences, Univ. of California, Berkeley, California 94720, USA) ,  TOSUN Mahmut (Electrical Engineering and Computer Sciences, Univ. of California, Berkeley, California 94720, USA) ,  HETTICK Mark (Electrical Engineering and Computer Sciences, Univ. of California, Berkeley, California 94720, USA) ,  AHN Geun Ho (Electrical Engineering and Computer Sciences, Univ. of California, Berkeley, California 94720, USA) ,  HU Chenming (Electrical Engineering and Computer Sciences, Univ. of California, Berkeley, California 94720, USA) ,  JAVEY Ali (Electrical Engineering and Computer Sciences, Univ. of California, Berkeley, California 94720, USA)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 108  Issue： 8  Page： 083111-083111-5  Publication year： Feb. 22, 2016 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *FET ,  *selenide (chalcogenide) ,  tungsten compound ,  tin compound ,  device structure ,  two dimension ,  semiconductor material ,  temperature dependence ,  zirconium oxide ,  *heterojunction ,  current-voltage characteristic ,  tin selenide ,  tungsten selenide ,  two dimensional material ,  hetero-structure
Semi thesaurus term： *tunnel FET

JST classification (1)： Transistors  (NC03070N)

Terms in the title (3)： ヘテロ構造 ,  2D ,  トンネル電界効果トランジスタ