Art

J-GLOBAL ID：201602200955907783   Reference number：16A0004089

Code Generation Limiting Maximum and Minimum Hamming Distances for Non-Volatile Memories

不揮発性メモリ用の最大及び最小のHamming距離を制限する符号生成

Author (4)： KOJO Tatsuro (Dept. of Computer Sci. and Communications Engineering, Waseda Univ.) ,  TAWADA Masashi (Dept. of Computer Sci. and Communications Engineering, Waseda Univ.) ,  YANAGISAWA Masao (Dept. of Computer Sci. and Communications Engineering, Waseda Univ.) ,  TOGAWA Nozomu (Dept. of Computer Sci. and Communications Engineering, Waseda Univ.)
Material： IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences (Web)  (IEICE Trans Fundam Electron Commun Comput Sci (Web))
Volume： E98.A  Issue： 12  Page： 2484-2493 (J-STAGE)  Publication year： 2015 
JST Material Number： U0466A  ISSN： 1745-1337  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *Hamming distance ,  *nonvolatile memory ,  error correcting code ,  data writing ,  *energy consumption ,  code ,  extension ,  data type
Semi thesaurus term： bit pattern ,  enlargement ,  *energy consumption

JST classification (2)： Semiconductor integrated circuit  (NC03162T) ,  Code theory  (ND02030R)

Reference (13)：

• [1] T. Austin, E. Larson, and D. Ernst, “SimpleScalar: An infrastructure for computer system modeling,” Computer, vol.35, no.2, pp.59-67, 2002.
• [2] T.D. Burd and R.W. Brodersen, “Energy efficient design,” in Energy Efficient Microprocessor Design, pp.7-44, Springer Science & Business Media, New York, 2012.
• [3] J. Chen, R.C. Chiang, H.H. Huang, and G. Venkataramani, “Energy-aware writes to non-volatile main memory,” ACM SIGOPS Operating Systems Review, vol.45, no.3, pp.48-52, 2012.
• [4] S. Cho and H. Lee, “Flip-N-Write: a simple deterministic technique to improve PRAM write performance, energy and endurance,” Proc. 42nd Annual IEEE/ACM International Symposium on Microarchitecture, Micro 42, pp.347-357, 2009.
• [5] X. Dong, X. Wu, G. Sun, Y. Xie, H. Li, and Y. Chen, “Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement,” Proc. 45th Annual Conference on Design Automation, DAC'08, pp.554-559, 2008.

Terms in the title (4)： 不揮発性メモリ ,  Hamming距離 ,  制限 ,  符号