Art

J-GLOBAL ID：201602211551685460   Reference number：16A0106115

Effects of Solution Concentrations on Crystal Growth of Anthracene Thin Films on Silicon by Rapid Expansion of Supercritical Solutions (RESS) Using Carbon Dioxide

二酸化炭素を用いた超臨界溶液(RESS)の急激な膨張によるケイ素上のアントラセン薄膜の結晶成長に及ぼす溶液濃度の影響

Author (3)： FUJII Tatsuya (Dep. of Chemistry and Material Engineering, Fac. of Engineering, Shinshu Univ.) ,  TAKAHASHI Yuta (Dep. of Chemistry and Material Engineering, Fac. of Engineering, Shinshu Univ.) ,  UCHIDA Hirohisa (Dep. of Chemistry and Material Engineering, Fac. of Engineering, Shinshu Univ.)
Material： Journal of Chemical Engineering of Japan  (J Chem Eng Jpn)
Volume： 48  Issue： 9  Page： 795-803 (J-STAGE)  Publication year： 2015 
JST Material Number： S0629A  ISSN： 0021-9592  CODEN： JCEJAQ  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *supercritical fluid ,  *carbon dioxide ,  *crystal growth ,  silicon ,  thin film ,  expansion ,  solution(liquid) ,  concentration(ratio) ,  particle ,  polyacene
Semi thesaurus term： 急速成長 ,  粒子形態 ,  溶液濃度 ,  超臨界溶液 ,  silicon ,  樹枝状粒子 ,  島状粒子 ,  閾値濃度

JST classification (2)： Crystal growth of organic compounds  (BK13070E) ,  Thin films of organic compounds  (BK14070L)

Substance index (1)： Anthracene

Reference (54)：

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Terms in the title (8)： 二酸化炭素 ,  超臨界 ,  溶液 ,  膨張 ,  ケイ素 ,  アントラセン ,  薄膜 ,  結晶成長