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J-GLOBAL ID：201602215792292067   Reference number：16A0610068

Contactless analysis of electric dipoles at high-k/SiO₂ interfaces by surface-charge-switched electron spectroscopy

表面電荷スイッチ電子分光による高k/SiO₂界面における電気双極子の無接触分析

Author (8)： Toyoda S. (Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan) ,  Fukuda K. (Research and Development Initiative for Scientific Innovation of New Generation Batteries, Office of Society-Academia Collaboration for Innovation, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan) ,  Itoh E. (Department of Electrical and Electronic Engineering, Shinshu University, Nagano 380-8553, Japan) ,  Sugaya H. (R&D Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan) ,  Morita M. (Research and Development Initiative for Scientific Innovation of New Generation Batteries, Office of Society-Academia Collaboration for Innovation, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan) ,  Nakata A. (Research and Development Initiative for Scientific Innovation of New Generation Batteries, Office of Society-Academia Collaboration for Innovation, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan) ,  Uchimoto Y. (Research and Development Initiative for Scientific Innovation of New Generation Batteries, Office of Society-Academia Collaboration for Innovation, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan) ,  Matsubara E. (Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 108  Issue： 21  Page： 211604-211604-5  Publication year： May. 23, 2016 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： The continuous development of ...

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Thesaurus term： *insulating film ,  *dielectric thin film ,  *silicon dioxide ,  silicon ,  *interface(surface) ,  *electric dipole ,  *electron spectroscopy ,  electron gun ,  *tantalum oxide ,  *annealing(heat treatment) ,  *temperature dependence ,  dielectric polarization ,  valence band ,  offset ,  X-ray photoelectron spectroscopy
Semi thesaurus term： *high-k dielectrics ,  silicon ,  *annealing (heat treatment) ,  X-ray photoelectron spectroscopy

JST classification (3)： Oxide thin films  (BK14050P) ,  Dielectrics in general  (BM05010F) ,  Electronic structure of crystalline insulators  (BM02070Y)

Terms in the title (6)： 表面電荷 ,  電子分光 ,  SiO2 ,  界面 ,  電気双極子 ,  接触分析