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J-GLOBAL ID:201602226174251830   Reference number:16A0610140

Epitaxial growth of diluted magnetic semiconductor Ge1-xCrxTe with high Cr composition

高Cr組成の希薄磁性半導体Ge1-xCrxTeのエピタキシャル成長
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Material:
Volume: 108  Issue: 22  Page: 222403-222403-4  Publication year: May. 30, 2016 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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IV-VI diluted magnetic semicon...
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Crystal growth of semiconductors  ,  Magnetic properties of inorganic compounds 
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