Art

J-GLOBAL ID：201602233724004833   Reference number：16A1004717

Enhancement of SiO₂/Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation

急速な熱酸化の間の熱歪みで誘起されるSiO₂/Si(001)界面酸化の強化

Author (5)： Ogawa Shuichi (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan) ,  Tang Jiayi (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan) ,  Yoshigoe Akitaka (Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan) ,  Ishidzuka Shinji (National Institute of Technology, Akita College, Akita 011-8511, Japan) ,  Takakuwa Yuji (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan)
Material： Journal of Chemical Physics  (J Chem Phys)
Volume： 145  Issue： 11  Page： 114701-114701-7  Publication year： Sep. 21, 2016 
JST Material Number： C0275A  ISSN： 0021-9606  CODEN： JCPSA6  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *thermal oxidation ,  *strain ,  *silicon dioxide ,  *crystal face ,  Auger electron spectroscopy ,  measurement ,  substrate temperature ,  activation energy ,  *point defect ,  simulation model ,  *silicon ,  *distortion by heating ,  real time measurement ,  reaction model
Semi thesaurus term： Auger electron spectroscopy

JST classification (2)： Surface chemistry in general  (CB12010J) ,  Other noncatalytic reactions  (CB06070U)

Terms in the title (8)： 熱酸化 ,  熱歪み ,  誘起 ,  SiO2 ,  Si ,  界面 ,  酸化 ,  強化