Art

J-GLOBAL ID：201602256416906785   Reference number：16A0817879

Characterization of vertical Au/β-Ga_2O_3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

MBE成長させた高抵抗エピタキシャル層を有する垂直Au/βGa_2O_3単結晶Schottkyフォトダイオードの特性化【Powered by NICT】

Author (4)： Liu X Z (School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China) ,  Yue C (School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China) ,  Xia C T (Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences) ,  Zhang W L (School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China)
Material： Chinese Physics B  (Zhongguo Wuli B)
Volume： 25  Issue： 1  Page： 017201-1-017201-5  Publication year： Jan. 2016 
JST Material Number： W1539A  ISSN： 1674-1056  Document type： Article
Article type： 原著論文  Country of issue： China (CHN)  Language： ENGLISH (EN)

Abstract/Point： High-resistivity β-Ga_2O_3 thi...

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Thesaurus term： *characterization ,  potential barrier ,  donor ,  conductive property ,  *gallium ,  *single crystal ,  silicon ,  Schottky barrier diode ,  *photodiode ,  gain ,  doping ,  *MBE growth
Semi thesaurus term： バイアス電圧 ,  外部量子効率 ,  光応答 , 【Automatic Indexing@JST】

Author keywords (2)： gallium oxides thin films Schottky diode ,  ultraviolet photodetector

JST classification (3)： Diodes  (NC03050R) ,  Semiconductor-metal contacts  (BM03084G) ,  Light emitting devices  (NC03082G)

Terms in the title (7)： MBE成長 ,  エピタキシャル層 ,  垂直 ,  Au ,  単結晶 ,  フォトダイオード ,  特性化