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J-GLOBAL ID:201602279430153074   Reference number:16A1319006

Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process

ポスト金属アニーリングプロセスとしてのマイクロ波アニーリングによりアリールした高k/金属ゲートMOSキャパシタの研究【Powered by NICT】
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Volume: 2016  Issue: NANO  Page: 773-776  Publication year: 2016 
JST Material Number: W2441A  Document type: Proceedings
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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MOSFETs with high-k and metal ...
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Signal theory  ,  Semiconductor integrated circuit  ,  Graphic and image processing in general 

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