Art

J-GLOBAL ID：201702210228874061   Reference number：17A1810964

Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction

その場X線回折で測った微傾斜GaAs基板上で成長させたInGaAs層の歪緩和機構への基板配向の効果

Author (9)： SUZUKI Hidetoshi (Univ. Miyazaki, Miyazaki, JPN) ,  SASAKI Takuo (National Inst. for Quantum and Radiological Sci. and Technol., Hyogo, JPN) ,  TAKAHASI Masamitu (National Inst. for Quantum and Radiological Sci. and Technol., Hyogo, JPN) ,  OHSHITA Yoshio (Toyota Technological Inst., Nagoya, JPN) ,  KOJIMA Nobuaki (Toyota Technological Inst., Nagoya, JPN) ,  KAMIYA Itaru (Toyota Technological Inst., Nagoya, JPN) ,  FUKUYAMA Atsuhiko (Univ. Miyazaki, Miyazaki, JPN) ,  IKARI Tetsuo (Univ. Miyazaki, Miyazaki, JPN) ,  YAMAGUCHI Masafumi (Toyota Technological Inst., Nagoya, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 56  Issue： 8S2  Page： 08MA06.1-08MA06.4  Publication year： Aug. 2017 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *X-ray diffraction ,  *vicinal surface ,  *gallium arsenide ,  *indium gallium arsenide ,  *relaxation phenomenon ,  *orientation(direction) ,  indium ,  precipitation(phase separation) ,  *mismatch dislocation ,  anisotropy ,  crystallinity ,  substrate(plate) ,  compound semiconductor
Semi thesaurus term： in situ X-ray diffraction ,  *strain relaxation

JST classification (2)： Semiconductor thin films  (BK14040E) ,  Lattice defects in semiconductors  (BK12040Q)

Terms in the title (6)： X線回折 ,  GaAs基板 ,  成長 ,  InGaAs ,  歪緩和 ,  配向