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J-GLOBAL ID:201702220038873072   Reference number:17A1557644

Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures

リンδドープした隣接閉じ込め構造を有するGe量子ドットからの発光増強【Powered by NICT】
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Volume: 477  Page: 131-134  Publication year: 2017 
JST Material Number: B0942A  ISSN: 0022-0248  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Room-temperature photoluminesc...
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Semiconductor thin films 
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