Art
J-GLOBAL ID：201702221253061906   Reference number：17A0381443

Electrostamping through sam layer for 1:1 transfer of 40-NM-wide patterns over MM2 area

MM~2地域上の40nm広パターンの1:1移動のsam層を通したElectrostamping【Powered by NICT】
Author (3)：
Li Yongfang

About Li Yongfang

(Corporate Research & Development Center, Toshiba Corporation, Kawasaki, Japan)

About Corporate Research & Development Center, Toshiba Corporation, Kawasaki, Japan

, 
Toshiyoshi Hiroshi

About Toshiyoshi Hiroshi

(Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan)

About Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan

, 
Fujita Hiroyuki

About Fujita Hiroyuki

(Institute of Industrial Science, The University of Tokyo, Tokyo, Japan)

About Institute of Industrial Science, The University of Tokyo, Tokyo, Japan


Material：
IEEE Conference Proceedings  (IEEE Conf Proc)

About IEEE Conference Proceedings


Volume： 2017  Issue： MEMS  Page： 278-281  Publication year： 2017 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Abstract/Point：
Abstract/Point
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The paper reports a novel appr...
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*meniscus

About meniscus

, 
hydrophobic

About hydrophobic

, 
resolving power

About resolving power

, 
electrochemical reaction

About electrochemical reaction

, 
thin film

About thin film

, 
high-resolution

About high-resolution

, 
lithography

About lithography

, 
relative humidity

About relative humidity

, 
contact area

About contact area

, 
nanopattern

About nanopattern


JST classification (1)：
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
地域

About 地域

, 
SAM

About SAM


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