Art

J-GLOBAL ID：201702225866247454   Reference number：17A0685899

Epitaxial growth of monolayer MoSe₂ on GaAs

GaAs上の単層MoSe₂のエピタキシャル成長

Author (9)： ONOMITSU Koji (NTT Corp., Kanagawa, JPN) ,  KRAJEWSKA Aleksandra (NTT Corp., Kanagawa, JPN) ,  KRAJEWSKA Aleksandra (On leave from Univ. Edinburgh, GBR) ,  NEUFELD Ryan A. E. (NTT Corp., Kanagawa, JPN) ,  NEUFELD Ryan A. E. (On leave from Univ. Waterloo, CAN) ,  MAEDA Fumihiko (NTT Corp., Kanagawa, JPN) ,  MAEDA Fumihiko (Fukuoka Inst. of Technol., Fukuoka, JPN) ,  KUMAKURA Kazuhide (NTT Corp., Kanagawa, JPN) ,  YAMAMOTO Hideki (NTT Corp., Kanagawa, JPN)
Material： Applied Physics Express  (APEX)
Volume： 9  Issue： 11  Page： 115501.1-115501.4  Publication year： Nov. 2016 
JST Material Number： F0599C  ISSN： 1882-0778  CODEN： APEPC4  Document type： Article
Article type： 短報  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *gallium arsenide ,  *selenide(chalcogenide) ,  *molybdenum compound ,  *epitaxy ,  *MBE growth ,  oxide ,  Raman spectroscopy
Semi thesaurus term： GaAs ,  molybdenum selenide ,  epitaxial growth ,  molecular beam epitaxy ,  native oxide ,  MEE growth

JST classification (2)： Thin films of other inorganic compounds  (BK14060A) ,  Infrared spectra,Raman scattering and Raman spectra of inorganic compounds  (BM08063C)

Reference (22)：

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Terms in the title (3)： GaAs ,  単層 ,  エピタキシャル成長