Art

J-GLOBAL ID：201702230257705891   Reference number：17A0040748

Thermal Properties of Power Si MOSFET by Considering Electron - Phonon Scattering Using Monte Carlo Simulation

モンテカルロシミュレーションを用いた電子-フォノン散乱の考慮による電力Si MOSFETの熱特性

Author (4)： Kibushi Risako (Dept. of Mechanical Systems Engineering, Toyama Prefectural University) ,  Hatakeyama Tomoyuki (Dept. of Mechanical Systems Engineering, Toyama Prefectural University) ,  Nakagawa Shinji (Dept. of Mechanical Systems Engineering, Toyama Prefectural University) ,  Ishizuka Masaru (Dept. of Mechanical Systems Engineering, Toyama Prefectural University)
Material： Transactions of the Japan Institute of Electronics Packaging (Web)  (Trans Jpn Inst Electron Packag (Web))
Volume： 8  Issue： 1  Page： 55-61(J-STAGE)  Publication year： 2015 
JST Material Number： U0592A  ISSN： 1884-8028  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *MOSFET ,  *power transistor ,  simulation ,  relaxation phenomenon ,  *relaxation time ,  computer simulation ,  *heat characteristic ,  scattering ,  hot spot
Semi thesaurus term： energy relaxation ,  phonon scattering ,  Monte Carlo simulation ,  *power MOSFET ,  thermal simulation

Author keywords (5)： Power Si MOSFET ,  Electro-Thermal Analysis ,  Monte-Carlo Simulation ,  Energy Relaxation Time ,  Hot Spot

JST classification (1)： Transistors  (NC03070N)

Reference (9)：

• [1] R. Kibushi, T. Hatakeyama, S. Nakagawa, and M. Ishizuka, "Analysis of Heat Generation from a Power Si MOSFET," Transactions of The Japan Institute of Electronics Packaging, Vol. 6, No. 1, pp. 51-56, 2013.
• [2] R. Kibushi, T. Hatakeyama, S. Nakagawa, and M. Ishizuka, "Calculation of Temperature Distribution of Power Si MOSFET with Electro-Thermal Analysis: The Effect of Boundary Condition," Transactions of The Japan Institute of Electronics Packaging, Vol. 7, No. 1, pp. 52-57, 2014.
• [3] C. Jacoboni and L. Reggiani, "The Monte Carlo Method for the Solution of Charge Transport in Semiconductor with Applications to Covalent Materials," Reviews of Modern Physics, Vol. 55, pp. 645-705, 1983.
• [4] K. Tomizawa, "Numerical Simulation of Submicron Semiconductor Device," Artech House, 1993.
• [5] C. Yutian, M. Chinthavali, and L. M. Tolbert, "Temperature dependent Pspice model of silicon carbide power MOSFET," Proc. of APEC2012, pp. 1698-1704, 2012.

Terms in the title (4)： モンテカルロシミュレーション ,  Si ,  MOSFET ,  熱特性