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J-GLOBAL ID：201702233225394785   Reference number：17A1465153

Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering

DCマグネトロンスパッタリングによるSi(001)上のGe薄膜のエピタキシャル成長【Powered by NICT】

Author (10)： Otsuka Shintaro (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Mori Takahiro (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Morita Yukinori (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Uchida Noriyuki (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Liu Yongxun (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  O'uchi Shin-ichi (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Fuketa Hiroshi (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Migita Shinji (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Masahara Meishoku (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Matsukawa Takashi (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan)
Material： Materials Science in Semiconductor Processing  (Mater Sci Semicond Process)
Volume： 70  Page： 3-7  Publication year： 2017 
JST Material Number： W1055A  ISSN： 1369-8001  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： We have demonstrated that sub-...

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Thesaurus term： *thin film ,  rocking curve ,  *epitaxy ,  RTA ,  effective value ,  *Germanium ,  X-Ray Diffraction ,  Raman spectrum ,  compressive strain ,  reciprocal lattice space ,  crystal quality ,  *DC magnetron sputtering

Author keywords (3)： Heteroepitaxial growth ,  Germanium ,  DC magnetron sputtering

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (5)： DCマグネトロンスパッタリング ,  Si ,  Ge ,  薄膜 ,  エピタキシャル成長