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J-GLOBAL ID：201702233865005618   Reference number：17A1629222

Investigation on the origin of preferred a-axis orientation of BaSi₂ films deposited on Si(100) by thermal evaporation

熱蒸発によるSi(100)上に堆積したBaSi_2膜の優先a軸配向の起源に関する研究【Powered by NICT】

Author (6)： Hara Kosuke O. (Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan) ,  Yamamoto Chiaya (Center for Creative Technology, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510, Japan) ,  Yamanaka Junji (Center for Instrumental Analysis, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510, Japan) ,  Arimoto Keisuke (Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan) ,  Nakagawa Kiyokazu (Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan) ,  Usami Noritaka (Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan)
Material： Materials Science in Semiconductor Processing  (Mater Sci Semicond Process)
Volume： 72  Page： 93-98  Publication year： 2017 
JST Material Number： W1055A  ISSN： 1369-8001  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： BaSi₂ is an emergin...

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Thesaurus term： electron diffraction ,  substrate temperature ,  annealing (heat treatment) ,  *evaporation ,  *Barium ,  preferred orientation ,  X-Ray Diffraction ,  epitaxy ,  Thermodynamics ,  transmission electron microscope ,  vapor deposition ,  crystal orientation ,  light absorber ,  film solar cell ,  *Silicon(100)

Author keywords (5)： Semiconducting silicide ,  Barium silicide ,  Crystal orientation ,  Vacuum evaporation ,  Transmission electron microscopy

JST classification (2)： Oxide thin films  (BK14050P) ,  Semiconductor thin films  (BK14040E)

Terms in the title (7)： 蒸発 ,  Si ,  堆積 ,  優先 ,  配向 ,  起源 ,  研究