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J-GLOBAL ID：201702239589411312   Reference number：17A1465154

Large single-crystal Ge-on-insulator by thermally-assisted (400°C) Si-seeded-pulse-laser annealing

熱アシスト(400°C)Siシードパルスレーザアニーリングによる大単結晶Ge【Powered by NICT】

Author (5)： Sadoh T. (Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan) ,  Kurosawa M. (Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan) ,  Heya A. (Department of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan) ,  Matsuo N. (Department of Materials and Synchrotron Radiation Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan) ,  Miyao M. (Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan)
Material： Materials Science in Semiconductor Processing  (Mater Sci Semicond Process)
Volume： 70  Page： 8-11  Publication year： 2017 
JST Material Number： W1055A  ISSN： 1369-8001  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： Low temperature (≦400°C) forma...

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Thesaurus term： crystallinity ,  *Germanium ,  low temperature ,  high speed ,  functional device ,  *single crystal ,  three dimension ,  insulating film ,  insulator ,  electron microscope ,  LSI ,  *laser annealing ,  high quality ,  lateral growth ,  Si wafer

Author keywords (4)： Ge ,  Rapid-melting growth ,  Laser annealing ,  3-dimensional LSI

JST classification (2)： Measurement,testing and reliability of solid-state devices  (NC03040G) ,  Materials of solid-state devices  (NC03020K)

Terms in the title (4)： アシスト ,  Si ,  単結晶 ,  Ge