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J-GLOBAL ID：201702241912610543   Reference number：17A1115467

A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers

電気二重層により媒介された半導体における光放射を生成するための融通性があり,かつ簡単なアプローチ【Powered by NICT】

Author (10)： Pu Jiang (Department of Advanced Science and Engineering, Waseda University, Tokyo, 169-8555, Japan) ,  Pu Jiang (Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan) ,  Fujimoto Taiyo (Department of Applied Physics, Waseda University, Tokyo, 169-8555, Japan) ,  Ohasi Yuki (Department of Applied Physics, Waseda University, Tokyo, 169-8555, Japan) ,  Kimura Shota (Department of Applied Physics, Waseda University, Tokyo, 169-8555, Japan) ,  Chen Chang-Hsiao (Department of Automatic Control Engineering, Feng Chia University, Taichung, 40724, Taiwan) ,  Li Lain-Jong (Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia) ,  Sakanoue Tomo (Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan) ,  Takenobu Taishi (Department of Advanced Science and Engineering, Waseda University, Tokyo, 169-8555, Japan) ,  Takenobu Taishi (Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan)
Material： Advanced Materials  (Adv Mater (Deerfield, Fla.))
Volume： 29  Issue： 24  Page： null  Publication year： 2017 
JST Material Number： W0001A  ISSN： 0935-9648  CODEN： ADVMEW  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： The light-emitting device is t...

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Thesaurus term： monomolecular layer ,  tunnel junction ,  *electric double layer ,  voltage ,  zinc oxide ,  PN junction ,  *semiconductor ,  single crystal ,  electrolyte ,  direct band gap ,  band gap energy ,  carrier doping ,  hetero-structure ,  light-emitting device
Semi thesaurus term： 光電子デバイス , 【Automatic Indexing@JST】

Author keywords (5)： electric double layers ,  light-emitting devices ,  p-i-n junction ,  transition metal dichalcogenides ,  zinc oxide

JST classification (2)： Light emitting devices  (NC03082G) ,  Physical properties of polymer solids  (CG02024U)

Terms in the title (3)： 電気二重層 ,  光放射 ,  融通性