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J-GLOBAL ID：201702249350634094   Reference number：17A1640779

First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs

UTB-GeOI MOSFETにおけるチャネル厚さスケーリング誘起電子移動度増大の初めての実験的観察【Powered by NICT】

Author (9)： Chang Wen Hsin (National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan) ,  Irisawa Toshifumi (National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan) ,  Ishii Hiroyuki (National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan) ,  Hattori Hiroyuki (National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan) ,  Ota Hiroyuki (National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan) ,  Takagi Hideki (National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan) ,  Kurashima Yuichi (National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan) ,  Uchida Noriyuki (National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan) ,  Maeda Tatsuro (National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan)
Material： IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)
Volume： 64  Issue： 11  Page： 4615-4621  Publication year： 2017 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： High quality ultrathin body (U...

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Thesaurus term： crystallinity ,  quality ,  effective mass ,  *channel ,  *Germanium ,  *MOSFET ,  *mobility (ratio) ,  interface (surface) ,  ab initio calculation ,  energy band ,  high quality ,  *electron mobility
Semi thesaurus term： nMOSFET ,  リフトオフ , 【Automatic Indexing@JST】

JST classification (1)： Transistors  (NC03070N)

Terms in the title (6)： MOSFET ,  チャネル ,  厚さ ,  スケーリング ,  誘起 ,  電子移動度