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J-GLOBAL ID：201702251415775216   Reference number：17A0361470

The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device

InGaAsP MBEにより成長させたに及ぼす急速熱アニーリングの著しい影響:材料と光起電素子【Powered by NICT】

Author (14)： Ji Lian (College of Energy, Nanjing Tech University, Nanjing 211816, China) ,  Ji Lian (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China) ,  Tan Ming (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China) ,  Ding Chao (College of Energy, Nanjing Tech University, Nanjing 211816, China) ,  Honda Kazuki (Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan) ,  Harasawa Ryo (Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan) ,  Yasue Yuya (Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan) ,  Wu Yuanyuan (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China) ,  Dai Pan (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China) ,  Tackeuchi Atsushi (Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan) ,  Bian Lifeng (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China) ,  Lu Shulong (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China) ,  Yang Hui (College of Energy, Nanjing Tech University, Nanjing 211816, China) ,  Yang Hui (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 458  Page： 110-114  Publication year： 2017 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Rapid thermal annealing (RTA) ...

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Thesaurus term： recombination(connection) ,  *annealing(heat treatment) ,  *RTA ,  solar cell ,  decay time ,  integral ,  optimum condition ,  doping ,  MBE growth ,  photoluminescence ,  *gallium indium arsenide phosphide
Semi thesaurus term： 結晶品質 ,  光電変換効率 ,  開回路電圧 ,  バンドギャップエネルギー , 【Automatic Indexing@JST】

Author keywords (3)： A3. Molecular beam epitaxy ,  B2. Semiconducting III-V materials ,  B3. Solar cells

JST classification (3)： Semiconductor thin films  (BK14040E) ,  Semiconductor-semiconductor contacts with Gr.13-15 element compounds  (BM03082Y) ,  Oxide thin films  (BK14050P)

Terms in the title (5)： InGaAsP ,  MBE ,  成長 ,  急速熱アニーリング ,  光起電素子