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J-GLOBAL ID:201702253666556530   Reference number:17A1020005

Characterization of grown-in dislocations in high-quality glucose isomerase crystals by synchrotron monochromatic-beam X-ray topography

シンクロトロン単色ビームX線トポグラフィーによる高品質グルコースイソメラーゼ結晶中のgrown-in転位の特性評価【Powered by NICT】
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Volume: 468  Page: 299-304  Publication year: 2017 
JST Material Number: B0942A  ISSN: 0022-0248  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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High quality glucose isomerase...
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Crystal growth of semiconductors  ,  Lattice defects in other inorganic compounds  ,  Crystal growth of other inorganic compounds 

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