Art

J-GLOBAL ID：201702254184491977   Reference number：17A1256457

V_th-shiftable SRAM cell TEGs for direct measurement for the immunity of the threshold voltage variability

しきい値電圧変動の免疫のための直接測定のためのV_thシフト可能なSRAMセルTEGs【Powered by NICT】

Author (6)： Yamaguchi Shogo (Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan) ,  Imi Hitoshi (Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan) ,  Tokumaru Shogo (Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan) ,  Kondo Takahiro (Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan) ,  Yamamoto Hiromasa (Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan) ,  Nakamura Kazuyuki (Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2017  Issue： ICMTS  Page： 1-3  Publication year： 2017 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We developed VTSTs for 6T-SRAM...

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Thesaurus term： *SRAM
Semi thesaurus term： 閾値電圧 , 【Automatic Indexing@JST】

JST classification (1)： Semiconductor integrated circuit  (NC03162T)

Terms in the title (6)： しきい値電圧 ,  免疫 ,  直接測定 ,  シフト ,  SRAM ,  セル