Art

J-GLOBAL ID：201702260908412512   Reference number：17A0223278

Characterizing Silicon Avalanche Photodiode Fabricated by Standard 0.18μm CMOS Process for High-Speed Operation

高速動作用の標準0.18μm CMOSプロセスにより製作したシリコンアバランシェフォトダイオードの特性評価

Author (6)： NAPIAH Zul Atfyi Fauzan Mohammed (Faculty of Electronic and Computer Engineering, Universiti Teknikal Malaysia Melaka (UTeM)) ,  NAPIAH Zul Atfyi Fauzan Mohammed (School of Electrical and Computer Engineering, Kanazawa University) ,  GYOBU Ryoichi (School of Electrical and Computer Engineering, Kanazawa University) ,  HISHIKI Takuya (School of Electrical and Computer Engineering, Kanazawa University) ,  MARUYAMA Takeo (School of Electrical and Computer Engineering, Kanazawa University) ,  IIYAMA Koichi (School of Electrical and Computer Engineering, Kanazawa University)
Material： IEICE Transactions on Electronics (Web)  (IEICE Trans Electron (Web))
Volume： E99.C  Issue： 12  Page： 1304-1311(J-STAGE)  Publication year： 2016 
JST Material Number： U0468A  ISSN： 1745-1353  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： semiconductor process ,  *CMOS structure ,  *avalanche photodiode ,  characterization ,  NMOS structure ,  *MOS structure ,  P-type semiconductor ,  ring (machine element) ,  *solid state circuit parts ,  transport phenomenon ,  bandwidth ,  current-voltage characteristic ,  frequency response ,  PMOS structure ,  carrier transport
Semi thesaurus term： CMOS process ,  *guard ring ,  characterization

Author keywords (4)： photodiode ,  avalanche photodiode ,  CMOS process ,  silicon

JST classification (1)： Photodetectors  (NC03083X)

Reference (16)：

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Terms in the title (7)： 高速動作 ,  標準 ,  CMOSプロセス ,  製作 ,  シリコン ,  アバランシェフォトダイオード ,  特性評価