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J-GLOBAL ID：201702264603301081   Reference number：17A0590383

Growth and ferroelectric properties of La and Al codoped BiFeO₃ epitaxial films

LaおよびAl共ドープBiFeO₃エピタキシャル膜の成長と強誘電特性

Author (3)： Izumi Hirokazu (Hyogo Prefectural Institute of Technology, Kobe, Hyogo 654-0037, Japan) ,  Yoshimura Takeshi (College of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531, Japan) ,  Fujimura Norifumi (College of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531, Japan)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 121  Issue： 17  Page： 174102-174102-6  Publication year： May. 07, 2017 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Preparation of La and Al codop...

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Thesaurus term： *bismuth compound ,  *ferrate ,  *Lanthanum ,  *Aluminum ,  *doping ,  *thin film ,  thin film growth ,  *ferroelectricity ,  pulsed laser deposition ,  crystal structure ,  residual polarization ,  constant ,  hysteresis ,  volume ,  leakage current ,  *epitaxial film ,  piezoelectric constant ,  lattice volume ,  *co-doping ,  polarization hysteresis
Semi thesaurus term： pulsed laser deposition ,  *ferroelectric property

JST classification (2)： Oxide thin films  (BK14050P) ,  Ferroelectrics,antiferroelectrics and ferroelasticity  (BM05030B)

Terms in the title (7)： La ,  Al ,  ドープ ,  BiFeO3 ,  エピタキシャル膜 ,  成長 ,  強誘電特性