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J-GLOBAL ID：201702267507742936   Reference number：17A1727295

Effect of strain on electron mobility in graphene

グラフェンにおける電子移動度に及ぼす歪の影響【Powered by NICT】

Author (3)： Hirai Hideki (Department of Electrical and Electronic Engineering, Kobe University, Kobe 657-8501, Japan) ,  Ogawa Matsuto (Department of Electrical and Electronic Engineering, Kobe University, Kobe 657-8501, Japan) ,  Souma Satofumi (Department of Electrical and Electronic Engineering, Kobe University, Kobe 657-8501, Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2017  Issue： SISPAD  Page： 209-212  Publication year： 2017 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We present a numerical study o...

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Thesaurus term： nonequilibrium state ,  *graphene ,  formulation ,  electronic band structure ,  carrier transport ,  phonon scattering ,  electron velocity ,  *electron mobility
Semi thesaurus term： 輸送方程式 ,  数値研究 , 【Automatic Indexing@JST】

JST classification (4)： Electric conduction in crystalline semiconductors  (BM03043X) ,  Electric conduction in other inorganic compounds  (BM03044O) ,  Electric conduction in semiconductors and insulators in general  (BM03041P) ,  Transistors  (NC03070N)

Terms in the title (3)： グラフェン ,  電子移動度 ,  歪