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J-GLOBAL ID：201702268642490372   Reference number：17A0214212

A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

強誘電体FETに基づく28nmH KMG超低電力組み込みNVM技術【Powered by NICT】

Author (18)： Trentzsch M. (GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany) ,  Flachowsky S. (GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany) ,  Richter R. (GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany) ,  Paul J. (GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany) ,  Reimer B. (GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany) ,  Utess D. (GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany) ,  Jansen S. (GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany) ,  Mulaosmanovic H. (NaMLab gGmbH, Dresden, Germany) ,  Muller S. (NaMLab gGmbH, Dresden, Germany) ,  Slesazeck S. (NaMLab gGmbH, Dresden, Germany) ,  Ocker J. (NaMLab gGmbH, Dresden, Germany) ,  Noack M. (NaMLab gGmbH, Dresden, Germany) ,  Muller J. (Fraunhofer IPMS, Dresden, Germany) ,  Polakowski P. (Fraunhofer IPMS, Dresden, Germany) ,  Schreiter J. (RacyICs GmbH, Dresden, Germany) ,  Beyer S. (GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany) ,  Mikolajick T. (NaMLab gGmbH, Dresden, Germany) ,  Rice B. (GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： IEDM  Page： 11.5.1-11.5.4  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We successfully implemented a ...

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Thesaurus term： high temperature ,  *transistor ,  durability ,  CMOS technology ,  *ferroelectric FET
Semi thesaurus term： *超低消費電力 ,  *FeFET , 【Automatic Indexing@JST】

JST classification (1)： Transistors  (NC03070N)

Terms in the title (3)： 強誘電体FET ,  超低電力 ,  組み込み