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J-GLOBAL ID：201702275510860561   Reference number：17A0214205

Experimental verification of a 3D scaling principle for low V_ce(sat) IGBT

低V_ce(sat)IGBTのための3次元スケーリング原理の実験的検証【Powered by NICT】

Author (22)： Kakushima K. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Hoshii T. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Tsutsui K. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Nakajima A. (Nat. Inst. Advanced Industrial Science and Technology, Tsukuba, Japan) ,  Nishizawa S. (Nat. Inst. Advanced Industrial Science and Technology, Tsukuba, Japan) ,  Wakabayashi H. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Muneta I. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Sato K. (Mitusbishi Electric, Fukuoka, Japan) ,  Matsudai T. (Toshiba Corp., Tokyo, Japan) ,  Saito W. (Toshiba Corp., Tokyo, Japan) ,  Saraya T. (The University of Tokyo, Tokyo, Japan) ,  Itou K. (The University of Tokyo, Tokyo, Japan) ,  Fukui M. (The University of Tokyo, Tokyo, Japan) ,  Suzuki S. (The University of Tokyo, Tokyo, Japan) ,  Kobayashi M. (The University of Tokyo, Tokyo, Japan) ,  Takakura T. (The University of Tokyo, Tokyo, Japan) ,  Hiramoto T. (The University of Tokyo, Tokyo, Japan) ,  Ogura A. (Meiji University, Kawasaki, Japan) ,  Numasawa Y. (Meiji University, Kawasaki, Japan) ,  Omura I. (Kyushu Inst. of Technology, Kitakyushu, Japan) ,  Ohashi H. (Tokyo Inst. of Technology, Yokohama, Japan) ,  Iwai H. (Tokyo Inst. of Technology, Yokohama, Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： IEDM  Page： 10.6.1-10.6.4  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Three dimensionally (3D) scale...

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Thesaurus term： *three dimension ,  *IGBT
Semi thesaurus term： ゲート電圧 , 【Automatic Indexing@JST】

JST classification (1)： Transistors  (NC03070N)

Terms in the title (7)： SAT ,  IGBT ,  3次元 ,  スケーリング ,  原理 ,  実験 ,  検証