2019 - 2024 Development of a germanium spin MOSFET
2022 - 2023 中空Ge基板を用いた高品質Ge-on-Insulator作製プロセスの新規開発(A new fabrication scheme for Ge on Insulator with improved material properties)
2021 - 2023 Si・Ge混合プラットフォーム上への異種機能混載集積回路の実現
2020 - 2023 Development of flexible CMOS with low power consumption
2020 - 2021 A new fabrication scheme for Ge on Insulator (NEW GOI)
2019 - 2021 The realization of steep slope tunnel FET on Ge-on-Insulator substrate
2018 - 2021 Electron Microscopy Analysis for Materials Interfaces –Development and Applications of Multidisciplinary Quantification Techniques for Atomic Structures and Electromagnetic Properties
2019 - 2020 卓越研究員制教員(総合理工学研究院)の海外派遣
2018 - 2018 電子・光デバイス応用に向けたIV族半導体の高品質ヘテロエピタキシー
2014 - 2017 Development of basic technology for Ge-CMOS integratable high-performance Ge optical devices
2013 - 2015 Application research for high mobility Ge MOSFET by charge compensation at MOS interface
2015 - 2015 超低消費電力GeトンネルFET実現に向けた基盤研究
2012 - 2012 高性能ULSIのための歪みGe MOSFETの研究開発
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Papers (80):
Hajime Kuwazuru, Taisei Aso, Dong Wang, Keisuke Yamamoto. Low Temperature (210 °C) Fabrication of Ge MOS Capacitor and Controllability of Its Flatband Voltage. Materials Science in Semiconductor Processing. 2024. 178. 108427
Noboru Shimizu, Dong Wang, Hiroshi Nakashima, and Keisuke Yamamoto. Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback Method. ECS Journal of Solid State Science and Technology. 2024. 13. 4. 044001
Keisuke Yamamoto, Dong Wang, Roger Loo, Clement Porret, Jinyoun Cho, Kristof Dessein, Valerie Depauw. Ge-on-Insulator Fabrication based on Ge-on-Nothing Technology. Japanese Journal of Applied Physics. 2024. 63. 04SP32
Linyu Huang, Kenta Moto, Kota Igura, Takamitsu Ishiyama, Kaoru Toko, Dong Wang, Keisuke Yamamoto. Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization. Japanese Journal of Applied Physics. 2024. 63. 2. 02SP42
Kenta Moto, Kaoru Toko, Tomonari Takayama, Toshifumi Imajo, Takamitsu Ishiyama, and Keisuke Yamamoto. Rectifying Schottky Contact in ZrN/polycrystalline p-Ge. IEEE Journal of the Electron Devices Society. 2023. 11. 553-558