Art

J-GLOBAL ID：201802218009874065   Reference number：18A1183461

Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates

InP基板上の高歪InAlP/InGaAs系の結合二重量子井戸

Author (2)： GOZU Shin-ichiro (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MOZUME Teruo (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 57  Issue： 5  Page： 055501.1-055501.4  Publication year： May. 2018 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *indium phosphide ,  substrate (plate) ,  molecule ,  *aluminum phoshide ,  *indium gallium arsenide ,  *multiple quantum well ,  *electronic transition ,  *solid state device ,  energy ,  band-offset ,  lattice constant ,  X-Ray Diffraction ,  *optical absorption spectrum ,  single crystal substrate ,  *intersubband transition ,  band gap energy ,  strained molecule
Semi thesaurus term： strained molecule ,  *double quantum wells ,  *optoelectronic device

JST classification (2)： Semiconductor-semiconductor contacts with Gr.13-15 element compounds  (BM03082Y) ,  Semiconductor integrated circuit  (NC03162T)

Reference (22)：

• B. F. Levine, R. J. Malik, J. Walker, K. K. Choi, C. G. Bethea, D. A. Kleinman, and J. M. Vandenberg, Appl. Phys. Lett. 50, 273 (1987).
• M. Helm, in Intersubband Transitions in Quantum Wells: Physics and Device Applications, ed. H. C. Lin and F. Capasso (Academic, New York, 2000) Semiconductors and Semimetals, Vol. 62, Chap. 1.
• B. F. Levine, J. Appl. Phys. 74, R1 (1993).
• J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, and A. Y. Cho, Science 264, 553 (1994).
• For example, P. Harrison, Quantum Wells, Wires and Dots (Wiley, Chichester, U.K., 2005) 2nd ed.

Terms in the title (4)： InP ,  歪 ,  InGaAs ,  二重量子井戸