Art

J-GLOBAL ID：201802225078233575   Reference number：18A0576198

Surface morphology and structure of Ge layer on Si(111) after solid phase epitaxy

固相エピタクシー後のSi(111)上のGe層の表面形態と構造【Powered by NICT】

Author (3)： Yoshida Ryoma (Graduate School of Nanobioscience, Yokohama City University, 22-2, Seto, Kanazawa-ku, Yokohama, 236-0027, Japan) ,  Tosaka Aki (Graduate School of Nanobioscience, Yokohama City University, 22-2, Seto, Kanazawa-ku, Yokohama, 236-0027, Japan) ,  Shigeta Yukichi (Graduate School of Nanobioscience, Yokohama City University, 22-2, Seto, Kanazawa-ku, Yokohama, 236-0027, Japan)
Material： Surface Science  (Surface Science Letters)
Volume： 671  Page： 43-50  Publication year： 2018 
JST Material Number： C0129B  ISSN： 0039-6028  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： The surface morphology change ...

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Thesaurus term： three dimension ,  interface (surface) ,  reconstitution ,  scanning tunneling microscope ,  *morphology (form) ,  annealing (heat treatment) ,  *Germanium ,  island structure ,  surface structure ,  crystallization ,  image ,  intermixing ,  *surface morphology ,  *solid phase epitaxy ,  structure
Semi thesaurus term： 濡れ層 , 【Automatic Indexing@JST】

Author keywords (6)： STM ,  Semiconductor ,  Ge ,  Si(111) ,  Surface structure ,  Solid phase epitaxy

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (4)： 固相エピタクシー ,  Si ,  Ge ,  表面形態