Art

J-GLOBAL ID：201802226012414680   Reference number：18A0589724

A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process

10nmクラスDRAMプロセスにおけるNBTI耐性回路解,SWD PMOS GIDL低減技術,適応歯車ダウン方式と準安定自由DQS露光装置を用いた16Gb LPDDR4X SDRAM【Powered by NICT】

Author (47)： Chun Ki Chul (Samsung Electronics, Hwaseong, Korea) ,  Chu Yong-Gyu (Samsung Electronics, Hwaseong, Korea) ,  Heo Jin-Seok (Samsung Electronics, Hwaseong, Korea) ,  Kim Tae-Sung (Samsung Electronics, Hwaseong, Korea) ,  Kim Soohwan (Samsung Electronics, Hwaseong, Korea) ,  Yang Hui-Kap (Samsung Electronics, Hwaseong, Korea) ,  Kim Mi-Jo (Samsung Electronics, Hwaseong, Korea) ,  Lee Chang-Kyo (Samsung Electronics, Hwaseong, Korea) ,  Kim Juhwan (Samsung Electronics, Hwaseong, Korea) ,  Yoon Hyunchul (Samsung Electronics, Hwaseong, Korea) ,  Shin Chang-Ho (Samsung Electronics, Hwaseong, Korea) ,  Cha Sanguhn (Samsung Electronics, Hwaseong, Korea) ,  Kim Hyung-Jin (Samsung Electronics, Hwaseong, Korea) ,  Kim Young-Sik (Samsung Electronics, Hwaseong, Korea) ,  Kim Kyungryun (Samsung Electronics, Hwaseong, Korea) ,  Kim Young-Ju (Samsung Electronics, Hwaseong, Korea) ,  Choi Wonjun (Samsung Electronics, Hwaseong, Korea) ,  Yim Dae-Sik (Samsung Electronics, Hwaseong, Korea) ,  Moon Inkyu (Samsung Electronics, Hwaseong, Korea) ,  Kim Young-Ju (Samsung Electronics, Hwaseong, Korea) ,  Lee Junha (Samsung Electronics, Hwaseong, Korea) ,  Choi Young (Samsung Electronics, Hwaseong, Korea) ,  Kwon Yongmin (Samsung Electronics, Hwaseong, Korea) ,  Choi Sung-Won (Samsung Electronics, Hwaseong, Korea) ,  Kim Jung-Wook (Samsung Electronics, Hwaseong, Korea) ,  Park Yoon-Suk (Samsung Electronics, Hwaseong, Korea) ,  Kang Woongdae (Samsung Electronics, Hwaseong, Korea) ,  Chung Jinil (Samsung Electronics, Hwaseong, Korea) ,  Kim Seunghyun (Samsung Electronics, Hwaseong, Korea) ,  Ryu Yesin (Samsung Electronics, Hwaseong, Korea) ,  Cho Seong-Jin (Samsung Electronics, Hwaseong, Korea) ,  Shin Hoon (Samsung Electronics, Hwaseong, Korea) ,  Jung Hangyun (Samsung Electronics, Hwaseong, Korea) ,  Kwon Sanghyuk (Samsung Electronics, Hwaseong, Korea) ,  Kang Kyuchang (Samsung Electronics, Hwaseong, Korea) ,  Lee Jongmyung (Samsung Electronics, Hwaseong, Korea) ,  Song Yujung (Samsung Electronics, Hwaseong, Korea) ,  Kim Young-Jae (Samsung Electronics, Hwaseong, Korea) ,  Kim Eun-Ah (Samsung Electronics, Hwaseong, Korea) ,  Ha Kyung-Soo (Samsung Electronics, Hwaseong, Korea) ,  Kim Kyoung-Ho (Samsung Electronics, Hwaseong, Korea) ,  Hyun Seok-Hun (Samsung Electronics, Hwaseong, Korea) ,  Ko Seungbum (Samsung Electronics, Hwaseong, Korea) ,  Choi Jung-Hwan (Samsung Electronics, Hwaseong, Korea) ,  Sohn Young-Soo (Samsung Electronics, Hwaseong, Korea) ,  Park Kwang-Il (Samsung Electronics, Hwaseong, Korea) ,  Jang Seong-Jin (Samsung Electronics, Hwaseong, Korea)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2018  Issue： ISSCC  Page： 206-208  Publication year： 2018 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： High-density and high-speed DR...

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Thesaurus term： smartphone ,  display device ,  reliability(property) ,  error correcting code ,  resolving power ,  camera ,  electric current ,  *DRAM ,  high speed ,  retention time ,  hand-held type ,  mass production
Semi thesaurus term： オーバヘッド ,  *PMOS構造 ,  *NBTI , 【Automatic Indexing@JST】

JST classification (1)： Computer system development  (JD02010R)

Terms in the title (12)： クラス ,  DRAM ,  プロセス ,  NBTI ,  耐性 ,  解 ,  PMOS ,  GIDL ,  適応 ,  歯車 ,  露光装置 ,  SDRAM