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J-GLOBAL ID：201802226522260265   Reference number：18A2029346

High Endurance Self-Heating OTS-PCM Pillar Cell for 3D Stackable Memory

3Dスタッカブルメモリ用の高耐久性自己加熱OTS-PCMピラーセル【JST・京大機械翻訳】

Author (13)： Yeh C. W. (Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan) ,  Chien W. C. (Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan) ,  Bruce R. L. (IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA) ,  Cheng H. Y. (Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan) ,  Kuo I. T. (Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan) ,  Yang C. H. (Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan) ,  Ray A. (IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA) ,  Miyazoe H. (IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA) ,  Kim W. (IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA) ,  Carta F. (IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA) ,  Lai E. K. (Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan) ,  BrightSky M. (IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA) ,  Lung H. L. (Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2018  Issue： VLSI Technology  Page： 205-206  Publication year： 2018 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： For the first time published, ...

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Thesaurus term： high speed ,  buffer layer ,  doping ,  Tellurium ,  arsenic ,  interchangeability ,  silicon ,  annealing (heat treatment) ,  *three dimension ,  Germanium ,  selenium ,  selector ,  etching ,  *durability ,  *Joule heating

JST classification (1)： Graphic and image processing in general  (JE04010I)

Terms in the title (7)： 3D ,  高耐久性 ,  自己加熱 ,  OTS ,  PCM ,  ピラー ,  セル