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J-GLOBAL ID：201802236647908515   Reference number：18A0187829

III-V/Ge-based tunneling MOSFET

III V/GeベーストンネルMOSFET【Powered by NICT】

Author (10)： Takagi S. (Department of Electrical Engineering and Information Systems, The University of Tokyo) ,  Ahn D.-H. (Department of Electrical Engineering and Information Systems, The University of Tokyo) ,  Gotow T. (Department of Electrical Engineering and Information Systems, The University of Tokyo) ,  Nishi K. (Department of Electrical Engineering and Information Systems, The University of Tokyo) ,  Bae T.-E. (Department of Electrical Engineering and Information Systems, The University of Tokyo) ,  Katoh T. (Department of Electrical Engineering and Information Systems, The University of Tokyo) ,  Matsumura R. (Department of Electrical Engineering and Information Systems, The University of Tokyo) ,  Takaguchi R. (Department of Electrical Engineering and Information Systems, The University of Tokyo) ,  Kato K. (Department of Electrical Engineering and Information Systems, The University of Tokyo) ,  Takenaka M. (Department of Electrical Engineering and Information Systems, The University of Tokyo)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2017  Issue： E3S  Page： 1-3  Publication year： 2017 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Tunnel MOSFET (TFET) is one of...

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Thesaurus term： band gap ,  channel ,  valence band ,  conduction band ,  tunnel junction ,  indium gallium arsenide ,  semiconductor ,  leakage current ,  state density ,  PN junction ,  optimization ,  *Germanium ,  hetero-structure ,  modification
Semi thesaurus term： トンネル電流 ,  トンネル電界効果トランジスタ , 【Automatic Indexing@JST】

JST classification (1)： Transistors  (NC03070N)

Terms in the title (3)： Ge ,  トンネル ,  MOSFET