Art

J-GLOBAL ID：201802243199959623   Reference number：18A0910783

Surface activated room-temperature bonding in Ar gas ambient for MEMS encapsulation

MEMS封止のためのArガス雰囲気中での表面活性化室温接合

Author (5)： TAKAGI Hideki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  KURASHIMA Yuichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  TAKAMIZAWA Akifumi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  IKEGAMI Takeshi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  YANAGIMACHI Shinya (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 57  Issue： 2S1  Page： 02BA04.1-02BA04.5  Publication year： Feb. 2018 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *MEMS ,  *seal ,  *Argon ,  *bonding and joining ,  room temperature ,  transmission electron microscope ,  ion irradiation ,  sapphire ,  *surface-activated bonding ,  Si wafer ,  ore ,  precious stone
Semi thesaurus term： silicon substrate ,  *closure

JST classification (2)： Bonding  (WC07020V) ,  Irradiational changes semiconductors  (BK16123E)

Terms in the title (5)： MEMS ,  封止 ,  Arガス雰囲気 ,  表面活性化 ,  室温