Art

J-GLOBAL ID：201802246207830698   Reference number：18A2242852

Femtosecond-laser-induced modifications on a 4H-SiC surface and their application to low-temperature diffusion at the Ni/SiC interface

4H-SiC表面のフェムト秒レーザ誘起改質とNi/SiC界面での低温拡散への応用

Author (8)： OKADA Tatsuya (Tokushima Univ., Tokushima, JPN) ,  TOMITA Takuro (Tokushima Univ., Tokushima, JPN) ,  UEKI Tomoyuki (Tokushima Univ., Tokushima, JPN) ,  HASHIMOTO Takuya (Tokushima Univ., Tokushima, JPN) ,  FUCHIKAMI Yuki (Tokushima Univ., Tokushima, JPN) ,  KATAYAMA Hiroyuki (Tokushima Univ., Tokushima, JPN) ,  HISAZAWA Hiromu (Tokushima Univ., Tokushima, JPN) ,  TANAKA Yasuhiro (Kagawa Univ., Takamatsu, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 57  Issue： 11  Page： 116501.1-116501.7  Publication year： Nov. 2018 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *silicon carbide ,  femtosecond laser ,  pulsed laser irradiation ,  surface modification ,  Nickel ,  Diffusion ,  low temperature ,  transmission electron microscope ,  metallic thin film ,  laser beam ,  annealing (heat treatment) ,  lamellar structure ,  silicide ,  nickel base alloy ,  microscopic Raman spectroscopy ,  electron energy loss spectroscopy ,  visualization ,  cross-sectional transmission electron microscope ,  nickel silicide
Semi thesaurus term： *4H-SiC ,  annealing treatment ,  lamellar structure

JST classification (2)： Metallic thin films  (BK14030T) ,  Laser irradiation effects and damages  (BK16040S)

Reference (30)：

• H. Matsunami and T. Kimoto, Mater. Sci. Eng. R 20, 125 (1997).
• T. Kimoto, Jpn. J. Appl. Phys. 54, 040103 (2015).
• I. Ohdomari, S. Sha, H. Aochi, T. Chikyow, and S. Suzuki, J. Appl. Phys. 62, 3747 (1987).
• J. Crofton, P. G. McMullin, J. R. Williams, and M. J. Bozack, J. Appl. Phys. 77, 1317 (1995).
• Ts. Marinova, A. Kakanakova-Georgieva, V. Krastev, R. Kakanakov, M. Neshev, L. Kassamakova, O. Noblanc, C. Arnodo, S. Cassette, C. Brylinski, B. Pecz, G. Radnoczi, and Gy. Vincze, Mater. Sci. Eng. B 46, 223 (1997).

Terms in the title (10)： 4H-SiC ,  フェムト秒レーザ ,  誘起 ,  改質 ,  Ni ,  SiC ,  界面 ,  低温 ,  拡散 ,  応用