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J-GLOBAL ID:201802255875304742   Reference number:18A1700834

CuTe層を持つ層状複合アニオン化合物の熱電特性

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Volume: 79th  Page: ROMBUNNO.21p-438-7  Publication year: Sep. 05, 2018 
JST Material Number: Y0055B  ISSN: 2758-4704  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Crystal growth of semiconductors 
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