Art

J-GLOBAL ID：201802262749416683   Reference number：18A0623842

Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

1.2kVトレンチクラスタIGBTの三次元スケール則の数値解析【Powered by NICT】

Author (5)： Luo Peng (Department of Electronic and Electrical Engineering, Electrical Machines and Drives Research Group, The University of Sheffield, Sheffield, U.K.) ,  Long Hong Yao (Department of Electronic and Electrical Engineering, Electrical Machines and Drives Research Group, The University of Sheffield, Sheffield, U.K.) ,  Sweet Mark R. (Department of Electronic and Electrical Engineering, Electrical Machines and Drives Research Group, The University of Sheffield, Sheffield, U.K.) ,  De Souza Maria Merlyne (Department of Electronic and Electrical Engineering, Electrical Machines and Drives Research Group, The University of Sheffield, Sheffield, U.K.) ,  Narayanan Ekkanath Madathil Sankara (Department of Electronic and Electrical Engineering, Electrical Machines and Drives Research Group, The University of Sheffield, Sheffield, U.K.)
Material： IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)
Volume： 65  Issue： 4  Page： 1440-1446  Publication year： 2018 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： The 3-D scaling rules for the ...

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Thesaurus term： clamp (fastener) ,  cathode ,  voltage drop ,  *three dimension ,  thyristor ,  switching loss ,  *IGBT ,  reliability (property) ,  *numerical analysis ,  *scaling law ,  scale down ,  threshold voltage ,  Energy efficient technologies ,  saving
Semi thesaurus term： energy saving ,  電流利得 ,  TCAD , 【Automatic Indexing@JST】

JST classification (2)： Transistors  (NC03070N) ,  Diodes  (NC03050R)

Terms in the title (5)： トレンチ ,  クラスタ ,  IGBT ,  スケール則 ,  数値解析