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J-GLOBAL ID：201802263238409479   Reference number：18A1383622

Large reduction of threading dislocations in diamond by hot-filament chemical vapor deposition accompanying W incorporations

W導入に伴う熱フィラメント化学蒸着によるダイヤモンド中の貫通転位の大きな減少【JST・京大機械翻訳】

Author (7)： Ohmagari Shinya (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Yamada Hideaki (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Tsubouchi Nobuteru (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Umezawa Hitoshi (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Chayahara Akiyoshi (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Tanaka Shingo (Research Institute of Electrochemical Energy (RIECEN), National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Mokuno Yoshiaki (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 113  Issue： 3  Page： 032108-032108-4  Publication year： 2018 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Dislocations in semiconductor ...

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Thesaurus term： epitaxy ,  *diamond ,  electrical property ,  Schottky barrier diode ,  metal wire ,  rectification(electric) ,  *threading dislocation ,  dislocation density ,  electronics ,  HOMO ,  impurity
Semi thesaurus term： 結晶品質 ,  ダイヤモンド膜 ,  エピタキシャル層 ,  デバイス特性 , 【Automatic Indexing@JST】

JST classification (2)： Semiconductor thin films  (BK14040E) ,  Lattice defects in semiconductors  (BK12040Q)

Terms in the title (3)： 熱フィラメント化学蒸着 ,  ダイヤモンド ,  貫通転位