Art

J-GLOBAL ID：201802268739547340   Reference number：18A0133033

Growth and characterization of freestanding p+diamond (100) substrates prepared by hot-filament chemical vapor deposition

ホットフィラメント化学気相蒸着により作製した自立p+ダイヤモンド(100)基板の成長と特性評価【Powered by NICT】

Author (6)： Ohmagari Shinya (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Yamada Hideaki (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Umezawa Hitoshi (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Tsubouchi Nobuteru (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Chayahara Akiyoshi (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan) ,  Mokuno Yoshiaki (Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan)
Material： Diamond and Related Materials  (Diam Relat Mater)
Volume： 81  Page： 33-37  Publication year： 2018 
JST Material Number： W0498A  ISSN： 0925-9635  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Heavily B-doped p+diamond (100...

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Thesaurus term： rocking curve ,  leakage current ,  thick film ,  laser cutting ,  rectification(electric) ,  doping ,  *vapor deposition ,  epitaxy ,  *diamond ,  X-ray diffraction ,  *characterization ,  Schottky barrier diode
Semi thesaurus term： 横方向成長 ,  ステップバンチング ,  HFCVD , 【Automatic Indexing@JST】

JST classification (1)： Carbon and its compounds  (YB02060D)

Terms in the title (8)： フィラメント ,  化学 ,  気相蒸着 ,  作製 ,  自立 ,  ダイヤモンド ,  成長 ,  特性評価