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J-GLOBAL ID：201802271544406008   Reference number：18A0588519

Towards 500°C SPER activated devices for 3D sequential integration

3次元逐次集積のための500°C SPER活性化素子に向けて【Powered by NICT】

Author (18)： Micout J. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Sklenard B. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Batude P. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Berthelon R. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Rafhay Q. (IMEP-LAHC, MINATEC/INPG, Univ. Grenoble Alpes) ,  Lacord J. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Mathieu B. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Pasini L. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Saghi Z. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Delaye V. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Brunet L. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Fenouillet-Beranger C. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Joblot S. (STMicroelectronics) ,  Mazen F. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Mazzocchi V. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Colinge J-P. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes) ,  Ghibaudo G. (IMEP-LAHC, MINATEC/INPG, Univ. Grenoble Alpes) ,  Vinet M. (CEA, Leti, MINATEC Campus, Univ. Grenoble Alpes)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2017  Issue： S3S  Page： 1-2  Publication year： 2017 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： This work investigates the pos...

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Thesaurus term： channel ,  *three dimension ,  heat balance ,  dopant ,  velocity dependence ,  recrystallization ,  crystal orientation ,  re-growth ,  solid phase epitaxy ,  fully depleted silicon-on-insulator
Semi thesaurus term： FDSOI , 【Automatic Indexing@JST】

JST classification (2)： Transistors  (NC03070N) ,  Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (4)： 3次元 ,  逐次 ,  集積 ,  活性化