Art
J-GLOBAL ID:201802279426316509   Reference number:18A1191055

EPR Study of Porous Si:C and SiO2:C Layers

多孔質Si:CおよびSiO_2:C層のEPR研究【JST・京大機械翻訳】
Author (7):
Material:
Volume: 255  Issue:Page: e1700559  Publication year: 2018 
JST Material Number: C0599A  ISSN: 0370-1972  CODEN: PSSBBD  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Abstract/Point:
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Initial porous silicon (por-Si...
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Luminescence of semiconductors  ,  Semiconductor thin films  ,  Crystal structure of metals 
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