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J-GLOBAL ID：201802279426316509   Reference number：18A1191055

EPR Study of Porous Si:C and SiO₂:C Layers

多孔質Si:CおよびSiO_2:C層のEPR研究【JST・京大機械翻訳】

Author (7)： Savchenko Dariya (National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”, pr. Peremohy 37, 03056 Kyiv, Ukraine) ,  Savchenko Dariya (Institute of Physics of the CAS, Na Slovance 2, 18221, Prague 8, Czech Republic) ,  Vasin Andrii (National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”, pr. Peremohy 37, 03056 Kyiv, Ukraine) ,  Vasin Andrii (V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, pr. Nauky 41, 03028 Kyiv, Ukraine) ,  Muto Shunsuke (Institute of Materials and Systems for Sustainability Nagoya University, Furo-cho, Chikusa-ku, 464-8601 Nagoya, Japan) ,  Kalabukhova Ekaterina (V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, pr. Nauky 41, 03028 Kyiv, Ukraine) ,  Nazarov Alexei (V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, pr. Nauky 41, 03028 Kyiv, Ukraine)
Material： Physica Status Solidi. B. Basic Solid State Physics  (Phys Status Solidi B Basic Solid State Phys)
Volume： 255  Issue： 6  Page： e1700559  Publication year： 2018 
JST Material Number： C0599A  ISSN： 0370-1972  CODEN： PSSBBD  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Initial porous silicon (por-Si...

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Thesaurus term： silicon dioxide ,  interface (surface) ,  Oxygen ,  spectrum ,  *porosity (property) ,  ESR ,  Lorentzian spectral lineshape ,  *porous silicon ,  Carbon ,  hydroxy group ,  energy loss ,  nano crystal ,  carbonization (chemical reaction) ,  pore ,  *silicon monoxide

Author keywords (5)： electron paramagnetic resonance ,  interface defects ,  porous silicon ,  Si:C layers ,  SiO2:C layers

JST classification (3)： Luminescence of semiconductors  (BM08092S) ,  Semiconductor thin films  (BK14040E) ,  Crystal structure of metals  (BK06000V)

Terms in the title (3)： 多孔質Si ,  EPR ,  研究