Art

J-GLOBAL ID：201802281381954063   Reference number：18A0933987

Ge quantum-dot enhanced c-Si solar cell for improved light trapping efficiency

光トラッピング効率改善のためのGe量子ドット増強c-Si太陽電池【JST・京大機械翻訳】

Author (9)： Liu Bin (Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China) ,  Hu Jian (Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian 116023, China) ,  Jia Lujian (Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China) ,  Liu Jia (Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China) ,  Ren Xiaodong (Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China) ,  Zhang Xisheng (Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China) ,  Guo Xiaojia (Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China) ,  Liu (Frank) Shengzhong (Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China) ,  Liu (Frank) Shengzhong (Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian 116023, China)
Material： Solar Energy  (Sol Energy)
Volume： 167  Page： 102-107  Publication year： 2018 
JST Material Number： E0099A  ISSN： 0038-092X  CODEN： SRENA  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： Ge quantum dots (QDs) have bee...

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Thesaurus term： vapor deposition ,  *solar cell ,  *silicon ,  optimization ,  *light trapping ,  photodetector ,  *improvement of efficiency ,  quantum efficiency ,  plasma treatment ,  *quantum dot ,  plasma CVD ,  short-circuit current density ,  wavelength range ,  *modification
Semi thesaurus term： 内部量子効率 , 【Automatic Indexing@JST】

Author keywords (5)： Germanium ,  Ge ,  Quantum dot ,  Silicon ,  Solar cell

JST classification (1)： Solar cell  (NC03084O)

Terms in the title (7)： 光トラッピング ,  効率改善 ,  Ge ,  量子ドット ,  増強 ,  Si ,  太陽電池