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J-GLOBAL ID：201802285041310370   Reference number：18A0454737

WeC-2-5 HIGH-EFFICIENCY PLANARIZATION METHOD FOR HARD-TO-MACHINE SEMICONDUCTOR SUBSTRATES COMBINING MECHANICAL POLISHING AND ATMOSPHERIC-PRESSURE PLASMA ETCHING

機械研磨と大気圧プラズマエッチングを結合した難加工半導体基板のための高効率平坦化法

Author (7)： Sano Yasuhisa (Graduate School of Engineering, Osaka University) ,  Shiozawa Kousuke (Graduate School of Engineering, Osaka University) ,  Doi Toshiro (Art, Science and Technology Center for Cooperative Research, Kyushu University) ,  Kurokawa Syuhei (Graduate School of Engineering, Kyushu University) ,  Aida Hideo (NJC Institute of Technology, Namiki Precision Jewel Co., Ltd.) ,  Miyashita Tadakazu (R&D Department, Fujikoshi Machinery Corp.) ,  Yamauchi Kazuto (Graduate School of Engineering, Osaka University)
Material： Proceedings of JSME-IIP/ASME-ISPS Joint Conference on Micromechatronics for Information and Precision Equipment (Web)
Volume： 2015  Page： _WeC-2-5-1-_WeC-2-5-3(J-STAGE)  Publication year： 2015 
JST Material Number： U1246A  ISSN： 2424-3132  Document type： Proceedings
Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Abstract/Point： A novel planarization method t...

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Terms in the title (6)： 機械研磨 ,  大気圧プラズマ ,  エッチング ,  半導体基板 ,  高効率 ,  平坦化