Art

J-GLOBAL ID：201802287044259625   Reference number：18A0502700

Patterned Sapphire Substrates for III-Nitride Epitaxial Growth

III族窒化物エピタキシャル成長のためのパターン化サファイア基板

Author (6)： OMIYA Natsuko (Namiki Precision Jewel Co. Ltd., Tokyo, JPN) ,  AIDA Hideo (Namiki Precision Jewel Co. Ltd., Tokyo, JPN) ,  KIMURA Yutaka (Namiki Precision Jewel Co. Ltd., Tokyo, JPN) ,  KAWAMATA Yuki (Namiki Precision Jewel Co. Ltd., Tokyo, JPN) ,  KIM Seong-Woo (Namiki Precision Jewel Co. Ltd., Tokyo, JPN) ,  UNEDA Michio (Kanazawa Inst. Technol., Nonoichi, JPN)
Material： International Journal of Automation Technology  (Int J Autom Technol)
Volume： 12  Issue： 2  Page： 179-186  Publication year： Mar. 05, 2018 
JST Material Number： L0997B  ISSN： 1881-7629  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： nitride ,  *epitaxy ,  pattern formation ,  *substrate (plate) ,  light emitting diode ,  quantum efficiency ,  gallium nitride ,  radiant intensity ,  efficiency ,  *sapphire substrate ,  light intensity
Semi thesaurus term： GAN ,  light emitting diode ,  *epitaxial growth ,  patterning ,  internal quantum efficiency ,  light extraction efficiency

JST classification (3)： Thin films of other inorganic compounds  (BK14060A) ,  Crystal growth of other inorganic compounds  (BK13060T) ,  Materials of solid-state devices  (NC03020K)

Reference (31)：

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Terms in the title (5)： III族 ,  窒化物 ,  エピタキシャル成長 ,  パターン化 ,  サファイア基板