Art

J-GLOBAL ID：201802291329401943   Reference number：18A1248750

Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement

静電容量測定によるpチャネルpH感受性SINW ISFETにおける電流ドリフトの解析【JST・京大機械翻訳】

Author (8)： Kim Sihyun (Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE), Seoul National University, Seoul 151-742, Republic of Korea) ,  Kwon Dae Woong (Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1770, USA) ,  Kim Sangwan (Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea) ,  Lee Ryoongbin (Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE), Seoul National University, Seoul 151-742, Republic of Korea) ,  Kim Tae-Hyeon (Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE), Seoul National University, Seoul 151-742, Republic of Korea) ,  Mo Hyun-Sun (School of Electrical Engineering, Kookmin University, Seoul 136-702, Republic of Korea) ,  Kim Dae Hwan (School of Electrical Engineering, Kookmin University, Seoul 136-702, Republic of Korea) ,  Park Byung-Gook (Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE), Seoul National University, Seoul 151-742, Republic of Korea)
Material： Current Applied Physics  (Curr Appl Phys)
Volume： 18  Issue： S  Page： S68-S74  Publication year： 2018 
JST Material Number： W1579A  ISSN： 1567-1739  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： The mechanism of drift effect ...

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Thesaurus term： pH sensor ,  hydration ,  *channel ,  *electric current ,  insulator ,  etching ,  *drift(migration) ,  ion diffusion ,  time dependence ,  oxide ,  pH dependence ,  *ISFET
Semi thesaurus term： ドレイン電流 ,  シリコンナノワイヤ ,  *pH感受性 , 【Automatic Indexing@JST】

Author keywords (3)： SiNW ISFET ,  pH sensor ,  Drift effect

JST classification (1)： Transistors  (NC03070N)

Terms in the title (6)： 静電容量測定 ,  チャネル ,  pH感受性 ,  ISFET ,  ドリフト ,  解析