Rchr
J-GLOBAL ID：201901011265054304
Update date: Apr. 23, 2024
Fleurence Antoine
Fleurence Antoine
Affiliation and department：
Job title：
Senior Lecturer
Research field (1)：
Thin-film surfaces and interfaces
Research keywords (5)：
Semiconducting materials
, Quantum materials
, 2D materials
, Surface Science
, Growth of inorganic thin films
Research theme for competitive and other funds (9)：
- 2022 - 2025 Encapsulated free-standing-like silicene: towards next generation two-dimensional silicon-based electronics
- 2019 - 2023 Exfoliation of intercalated silicene: Towards the fabrication of silicene-based devices
- 2019 - 2020 Possibility of stanene single-layer and bilayer on In-terminated InSb(111)
- 2017 - 2019 Germanene on Insulators: Towards the realization of a 2D topological insulator
- 2014 - 2018 Interface control of epitaxial silicene
- 2014 - 2016 Elucidation of the formation mechanisms of epitaxial silicene
- 2012 - 2014 Crystal and electronic structure engineering of epitaxial silicene
- 2013 - 2014 Study on the band engineering of epitaxial silicene through the fusion of experimental and calculation researches
- 2007 - 2009 Surface and interface control in the epitaxial growth of boride thin films
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Papers (46)：
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A Fleurence, Y Yamada-Takamura. Adatom-induced dislocation annihilation in epitaxial silicene. 2D Materials. 2021. 8. 4. 045011-045011
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A. Fleurence, Y. Awatani, C. Huet, F. B. Wiggers, S. M. Wallace, T. Yonezawa, Y. Yamada-Takamura. Band engineering in an epitaxial two-dimensional honeycomb Si6-xGex alloy. Physical Review Materials. 2021. 5. 1
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Hirokazu Nitta, Takahiro Yonezawa, Antoine Fleurence, Yukiko Yamada-Takamura, Taisuke Ozaki. First-principles study on the stability and electronic structure of monolayer GaSe with trigonal-antiprismatic structure. Physical Review B. 2020. 102. 23
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A. Fleurence, C.-C. Lee, R. Friedlein, Y. Fukaya, S. Yoshimoto, K. Mukai, H. Yamane, N. Kosugi, J. Yoshinobu, T. Ozaki, et al. Emergence of nearly flat bands through a kagome lattice embedded in an epitaxial two-dimensional Ge layer with a bitriangular structure. Physical Review B. 2020. 102. 20
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Artoni Kevin R. Ang, Yuichiro Fukatsu, Koji Kimura, Yuta Yamamoto, Takahiro Yonezawa, Hirokazu Nitta, Antoine Fleurence, Susumu Yamamoto, Iwao Matsuda, Yukiko Yamada-Takamura, et al. Time-resolved X-ray photoelectron diffraction using an angle-resolved time-of-flight electron analyzer. Japanese Journal of Applied Physics. 2020. 59. 10. 100902-100902
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MISC (7)：
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福本航大, LIU C., 新田寛和, FLEURENCE Antoine, 高村(山田)由起子, 大島義文. In-situ TEM observation of electrical conductance changes in GaSe multilayers by electron irradiation. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
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CHEN Tongmin, 米澤隆宏, 村上達也, 東嶺孝一, FLEURENCE Antoine, 大島義文, 高村(山田)由起子. Ge(111)基板上にMBE成長したGaSe薄膜の平面STM・STEM観察. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2020. 67th
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米澤隆宏, 村上達也, 東嶺孝一, CHEN Tongmin, 新田寛和, 久瀬雷矢, FLEURENCE Antoine, 大島義文, 高村(山田)由起子. MBE growth of layered group-3 monochalcogenide thin films with non-prismatic monolayer structure. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2020. 67th
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Gimbert Florian, Lee Chi-Cheng, Friedlein Rainer, Fleurence Antoine, Yamada-Takamura Yukiko, Ozaki Taisuke. 8aAS-11 Novel two-dimensional silicon and germanium allotropes : a first-principles study. Meeting abstracts of the Physical Society of Japan. 2014. 69. 2. 646-646
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Yoshinobu J., Yoshimoto S., Mukai K., Shimizu S., Koitaya T., Noritake H., Yamada-Takamura Y., Fleurence Antoine, Friedlein Rainer. 8aAS-2 Interaction of NO with the silicene/ZrB_2/Si(111) surface. Meeting abstracts of the Physical Society of Japan. 2014. 69. 2. 644-644
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Books (2)：
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Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry
Elsevier 2017
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Epitaxial silicene : Beyond silicene on silver substrates in Silicene : Structures, Properties, and Applications
Springer 2015
Lectures and oral presentations (82)：
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Ge(111)基板上にMBE成長したGaSe薄膜の平面STM・STEM観察
(2020)
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非柱状単位層構造を有する層状III族モノカルコゲナイド薄膜のMBE成長
(2020)
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β-Ga2O3 (-201) 単結晶の表面再構成構造解析
(2020)
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Plan-view STEM and STM study of GaSe/Ge(111) moire structures
(12th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC) '19 2019)
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Influence of strain at GaSe/Ge(111) interface formed through Van der Waals epitaxy
(14th international conference on atomically controlled surfaces Interfaces and nanostructures 2018 & 26th international colloquium on scanning tunneling microscopy 2018)
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Education (5)：
- 2004 - 2007 University Paris-Sud PhD in Physics
- 2003 - 2004 University of Paris-Sud Master course (2nd year) in nanosciences and nanotechnologies
- 2002 - 2003 University of Paris-Sud Department of Physics First year degree in Master course in Physics (Maitrise de Physique)
- 2001 - 2002 Unuversity of Paris-Sud Department of Physics License in Physics
- 1999 - 2001 Unuversity of Paris-Sud Second year university degree in Physics
Professional career (1)：
- M.S from University Paris-Sud(2004), Ph.D from University Paris-Sud(2007)
Work history (8)：
- 2023/04 - 2024/03 Japan Advanced Institute of Science and Technology School of Materials Science
- 2018/04 - 2023/03 Japan Advanced Institute of Science and Technology School of Materials Science Senior Lecturer
- 2012/01 - 2018/03 Japan Advanced Institute of Science and Technology School of Materials Science Assistant Professor
- 2018/02 - 2018/02 Ecole Centrale Lyon Invited Professor
- 2011/01 - 2012/01 Japan Advanced Institute of Science and Technology School of Materials Science JSPS Postdoctoral fellow
- 2009/08 - 2011/11 Japan Advanced Institute of Science and Technology School of Materials Science Postdoc
- 2008/11 - University of Bialystok Invited young researcher
- 2007/09 - 2008/09 University Paris-Sud Temporary associate of teaching and research
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Awards (2)：
- 2007 - French society of Physics Best poster award colloque Alain Bouyssy 2007
- 2006 - International Workshop on Nanomagnets by Self-Organization Best poster presentation award
Association Membership(s) (1)：
American Physical Society
