Research field (1):
Electronic devices and equipment
Research keywords (3):
Power Device Control
, Power Modules
, Power Semiconductor Devices
Research theme for competitive and other funds (1):
2019 - 2021 A new low-voltage power MOSFET structure and control to break through theoretical limit for high efficiency electric vehicle
Papers (111):
Toshiaki Inuma, Dibo Zhang, Katsuhiro Hata, Kazuto Mikami, Kenji Hatori, Koji Tanaka, Wataru Saito, Makoto Takamiya. Digital Active Gate Driving Automatically Minimizing Switching Loss While Keeping Surge Current Below User-Specified Target. 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia). 2024
Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shin-ichi Nishizawa, Wataru Saito. Mechanism of gate voltage spike under digital gate control at IGBT switching operations. Power Electronic Devices and Components. 2024. 7. 100054-100054
Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa. Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping. IEEE Open Journal of Power Electronics. 2024. 5. 392-401
Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa. Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker. Microelectronics Reliability. 2023. 150. 115119-115119
M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito. An Ohmic Contact Process for AlGaN/GaN Structures using TiSi2 Electrodes. 2013 1ST IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA). 2013. 159-161
Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker
(34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2023)
A simple sensor device for power cycle degradation sensing
(34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2023)
Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module
(34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2023)
Restoration of Degraded Reverse Bias Safety Operating Area (RBSOA) in 3300V Scaled IGBTs by Non-Proportional Scaling Method
(2023 International Conference on Solid State Devices and Materials (SSDM) 2023)
Study on Stress in Trench Structures during Silicon IGBTs Process - Oxidation
(2023 International Conference on Solid State Devices and Materials (SSDM) 2023)
NPERC-J
, IEEE
, THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS
, THE JAPAN SOCIETY OF APPLIED PHYSICS
, THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN