Art

J-GLOBAL ID：201902207496363518   Reference number：19S1741333

Effect of CW laser annealing on silicon surface for application of power device

Author (12)： Kaneko, Satoru (Kanagawa Industrial Technology Center, Kanagawa Prefectural Government) ,  Ito, Takeshi (Kanagawa Industrial Technology Center, Kanagawa Prefectural Government) ,  Akiyama, Kensuke (Kanagawa Industrial Technology Center, Kanagawa Prefectural Government) ,  Yasui, Manabu (Kanagawa Industrial Technology Center, Kanagawa Prefectural Government) ,  Kato, Chihiro (Kanagawa Industrial Technology Center, Kanagawa Prefectural Government) ,  Tanaka, Satomi (Kanagawa Industrial Technology Center, Kanagawa Prefectural Government) ,  Hirabayashi, Yasuo (Kanagawa Industrial Technology Center, Kanagawa Prefectural Government) ,  Ozawa, Takeshi (Kanagawa Industrial Technology Center, Kanagawa Prefectural Government) ,  Matsuno, Akira (Phoeton Corp) ,  Nire, Takashi (Phoeton Corp) ,  Funakubo, Hiroshi (Department of Innovative and Engineered Materials, Tokyo Institute of Technology) ,  Yoshimoto, Mamoru (Department of Innovative and Engineered Materials, Tokyo Institute of Technology)
Material： World Academy of Science, Engineering and Technology
Volume： 50  Page： 330-332  Publication year： 2011 
JST Material Number： SCOPUS  ISSN： 2010-376X 
Country of issue： United States (USA)  Language： English (EN)

Terms in the title (2)： CW ,  LASER